| PART |
Description |
Maker |
| EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100
128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100
64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
| HB54R1G9F2U-B75B HB54R1G9F2U HB54R1G9F2U-10B HB54R |
1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| M1Y1G64TU8HA0B-3C M1U1G64TU8HA0F-3C M1U1G64TU8HA0B |
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 GREEN, DIMM-240
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 DIMM-240
|
Nanya Technology, Corp.
|
| EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存（128M的话x72位，2个等级）
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYS72T128001HFN-3.7-A |
128M X 72 DDR DRAM MODULE, DMA240
|
INFINEON TECHNOLOGIES AG
|
| EBJ10EE8BAFA-AG-E |
128M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
| HMT351U6BFR8C-G7 HMT325U6BFR8C-H9 HMT351U7BFR8C-H9 |
512M X 64 DDR DRAM MODULE, DMA240
256M X 64 DDR DRAM MODULE, DMA240
512M X 72 DDR DRAM MODULE, DMA240
128M X 64 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
| K4H1G0638B-TLB00 K4H1G0738B-TCB00 |
256M X 4 DDR DRAM MODULE, 0.75 ns, PDSO66
128M X 8 DDR DRAM MODULE, 0.75 ns, PDSO66
|
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IMSH1GU03A1F1C-08D |
128M X 64 DDR DRAM MODULE, DMA240 GREEN, UDIMM-240
|
Qimonda AG
|
